STB21NM60ND
数据手册.pdfSTMICROELECTRONICS STB21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
N 通道 FDmesh™ 功率 MOSFET,STMicroelectronics
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 600V 17A D2PAK
欧时:
STMicroelectronics FDmesh 系列 Si N沟道 MOSFET STB21NM60ND, 17 A, Vds=600 V, 3引脚 TO-263封装
贸泽:
MOSFET N-channel 600V, 17A FDMesh II
艾睿:
Increase the current or voltage in your circuit with this STB21NM60ND power MOSFET from STMicroelectronics. Its maximum power dissipation is 140000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with fdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R
富昌:
N-Channel 600 V 0.220 Ohm Surface Mount FDmesh™ II Power MosFet - D2PAK
Chip1Stop:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R
TME:
Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 10A; 140W; D2PAK
Verical:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R
Newark:
# STMICROELECTRONICS STB21NM60ND Power MOSFET, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
儒卓力:
**N-CH 650V 17A 220mOhm TO263-3 **
力源芯城:
600V,17A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 600V 17A D2PAK
Win Source:
MOSFET N-CH 600V 17A D2PAK