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MMUN2217LT1G

MMUN2217LT1G

数据手册.pdf

SOT-23 NPN 50V 100mA

Look no further than "s NPN digital transistor"s, the ideal component to use when designing a digital signal processing unit. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

MMUN2217LT1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.4 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 35 @5mA, 10V

额定功率Max 246 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 400 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

MMUN2217LT1G引脚图与封装图
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MMUN2217LT1G ON Semiconductor 安森美 SOT-23 NPN 50V 100mA 搜索库存