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MUN5137DW1T1G

MUN5137DW1T1G

数据手册.pdf

双偏置电阻晶体管 Dual Bias Resistor Transistors

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single

device. In the MUN5111DW1T1 series,two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Pb−Free Packages are Available

MUN5137DW1T1G中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

无卤素状态 Halogen Free

极性 PNP

耗散功率 250 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

最大电流放大倍数hFE 80 @5mA, 10V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 385 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-88-6

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.9 mm

封装 SC-88-6

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

MUN5137DW1T1G引脚图与封装图
暂无图片
在线购买MUN5137DW1T1G
型号 制造商 描述 购买
MUN5137DW1T1G ON Semiconductor 安森美 双偏置电阻晶体管 Dual Bias Resistor Transistors 搜索库存
替代型号MUN5137DW1T1G
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MUN5137DW1T1G

品牌: ON Semiconductor 安森美

封装: SOT-363 PNP -50V -100mA 385mW

当前型号

双偏置电阻晶体管 Dual Bias Resistor Transistors

当前型号

型号: MUN2140T1G

品牌: 安森美

封装: SC-59-3 PNP 338mW

功能相似

偏置电阻晶体管 Bias Resistor Transistors

MUN5137DW1T1G和MUN2140T1G的区别

型号: PUMB17,115

品牌: 恩智浦

封装: 6-TSSOP PNP 300mW

功能相似

TSSOP PNP 50V 100mA

MUN5137DW1T1G和PUMB17,115的区别

型号: MUN2137T1G

品牌: 安森美

封装: SC-59 PNP -50V -100mA 338mW

功能相似

偏置电阻晶体管 Bias Resistor Transistors

MUN5137DW1T1G和MUN2137T1G的区别