LM5104M

TEXAS INSTRUMENTS  LM5104M  双路芯片, MOSFET, 半桥, 9V-14V电源, 1.8A输出, 25ns延迟, SOIC-8

The is a high voltage half-bridge Gate Driver with adaptive delay, designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.

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Drives both a high-side and low-side N-channel MOSFET

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Adaptive rising and falling edges with programmable

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Additional delay

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Single input control

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25ns Typical fast turnoff propagation delay

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Supply rail under-voltage lockout

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.