ZTX449
数据手册.pdfDiodes(美台)
分立器件
TRANSISTOR NPN 30V 1000mA E-LINE
- 双极 BJT - 单 NPN 30 V 1 A 150MHz 1 W 通孔 E-Line（TO-92 兼容）
得捷:
TRANS NPN 30V 1A E-LINE
艾睿:
The NPN ZTX449 general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
安富利:
Trans GP BJT NPN 30V 1A 3-Pin E-Line
Chip1Stop:
Trans GP BJT NPN 30V 1A 3-Pin E-Line
Win Source:
TRANS NPN 30V 1A E-LINE