ZTX757

DIODES INC.  ZTX757  单晶体管 双极, PNP, 300 V, 30 MHz, 1 W, 500 mA, 50 hFE

- 双极 BJT - 单 PNP 300 V 500 mA 30MHz 1 W 通孔 E-Line（TO-92 兼容）

得捷:
TRANS PNP 300V 0.5A E-LINE

e络盟:
单晶体管 双极, PNP, 300 V, 30 MHz, 1 W, 500 mA, 50 hFE

艾睿:
The PNP ZTX757 general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.

安富利:
Trans GP BJT PNP 300V 0.5A 3-Pin E-Line

Verical:
Trans GP BJT PNP 300V 0.5A 1000mW 3-Pin E-Line

Newark:
# DIODES INC.  ZTX757  Bipolar BJT Single Transistor, PNP, 300 V, 30 MHz, 1 W, 500 mA, 50 hFE

Win Source:
TRANS PNP 300V 0.5A E-LINE