ZTX851STZ
数据手册.pdfDiodes(美台)
分立器件
ZTX851 系列 60 V 5 A NPN 硅 平面 中等功率 晶体管 - TO-92-3
- 双极 BJT - 单 NPN 60 V 5 A 130MHz 1.2 W 通孔 E-Line（TO-92 兼容）
得捷:
TRANS NPN 60V 5A E-LINE
艾睿:
Design various electronic circuits with this versatile NPN ZTX851STZ GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
Allied Electronics:
NPN Transistor, 5A, E-Line
安富利:
Trans GP BJT NPN 60V 5A 3-Pin E-Line Box
富昌:
ZTX851 系列 60 V 5 A NPN 硅 平面 中等功率 晶体管 - TO-92-3
Chip1Stop:
Trans GP BJT NPN 60V 5A 3-Pin E-Line Box
