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VND810PEPTR-E

VND810PEPTR-E

数据手册.pdf

双通道高侧驱动器 DOUBLE CHANNEL HIGH SIDE DRIVER

Description

The VND810PEP-E is a monolithic device made using| STMicroelectronics® VIPower™ M0-3

Technology. The VND810PEP-E is intended for driving any type of multiple load with one side

connected to ground.The active VCC pin voltage clamp protects the device against low energy spikes see ISO7637 ransient compatibility table. Active current limitation combined with thermal

shutdown and automatic restart protects the device against overload. The device detects the

open-load condition in both the on and off-state. n the off-state the device detects if the output is

shorted to VCC. The device automatically turns off n the case where the ground pin becomes

disconnected.

Features

■ CMOS compatible inputs

■ Open drain status outputs

■ On-state open-load detection

■ Off-state open-load detection

■ Shorted load protection

■ Undervoltage and overvoltage shutdown

■ Loss of ground protection

■ Very low standby current

■ Reverse battery protection

■ In compliance with the 2002/95/EC european directive

RDSon  : 160mW

IOUT : 3.5A

VCC : 36V

VND810PEPTR-E中文资料参数规格
技术参数

输出接口数 2

耗散功率 54000 mw

输出电流Max 3.5 A

耗散功率Max 54000 mW

电源电压 13 V

封装参数

安装方式 Surface Mount

引脚数 12

封装 PowerSSO-12

外形尺寸

封装 PowerSSO-12

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

VND810PEPTR-E引脚图与封装图
暂无图片
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型号 制造商 描述 购买
VND810PEPTR-E ST Microelectronics 意法半导体 双通道高侧驱动器 DOUBLE CHANNEL HIGH SIDE DRIVER 搜索库存
替代型号VND810PEPTR-E
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: VND810PEPTR-E

品牌: ST Microelectronics 意法半导体

封装: PowerSSO-12

当前型号

双通道高侧驱动器 DOUBLE CHANNEL HIGH SIDE DRIVER

当前型号

型号: VND810PEP-E

品牌: 意法半导体

封装: PowerSSO-12

完全替代

双通道高侧驱动器 DOUBLE CHANNEL HIGH SIDE DRIVER

VND810PEPTR-E和VND810PEP-E的区别