VSMY7850X01-GS08
数据手册.pdfVishay Semiconductor(威世)
电子元器件分类
VISHAY VSMY7850X01-GS08 红外发光二极管, 850NM, SMD
The is a 850nm Infrared Emitting Diode based on surface emitter technology with high radiant power and high speed. A 42mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1A. It has the floor life of 1 year, MSL 2, according to J-STD-020.
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- High reliability
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- High radiant power
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- High radiant intensity
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- Low forward voltage
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- AEC-Q101 qualified
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- ±60° Angle of half intensity