VB20150C-E3/8W
数据手册.pdf双高压Trench MOS势垒肖特基整流器 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 for TO-220AB, ITO-220AB and TO-262AA package
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.