VB20120SG-E3/8W
数据手册.pdf高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF= 0.54 V at IF= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 for TO-220AB, ITO-220AB, and TO-262AA package
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
得捷:
DIODE SCHOTTKY 120V 20A TO263AB
贸泽:
肖特基二极管与整流器 20 Amp 120 Volt Single TrenchMOS
艾睿:
Diode Schottky 120V 20A 3-Pin2+Tab TO-263AB T/R
安富利:
Diode Schottky 120V 20A 3-Pin2+Tab TO-263AB T/R