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UCC27712DR

UCC27712DR

TI(德州仪器) 电子元器件分类

支持互锁功能的 1.8A/2.8A、620V 半桥驱动器 8-SOIC -40 to 125

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range from 10 V to 22 V, and offers UVLO protection for both the VDD and HB bias supply.

Developed with ’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area NTSOA on the switch node HS, and interlock.

The device consists of one ground-referenced channel LO and one floating channel HO which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

UCC27712DR中文资料参数规格
技术参数

上升/下降时间 16ns, 10ns

输出接口数 2

下降时间Max 30 ns

上升时间Max 50 ns

工作温度Max 125 ℃

工作温度Min -40 ℃

电源电压 10V ~ 20V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 125℃ TJ

其他

产品生命周期 Pre-Release

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

UCC27712DR引脚图与封装图
UCC27712DR封装图

UCC27712DR封装图

UCC27712DR封装焊盘图

UCC27712DR封装焊盘图

在线购买UCC27712DR
型号 制造商 描述 购买
UCC27712DR TI 德州仪器 支持互锁功能的 1.8A/2.8A、620V 半桥驱动器 8-SOIC -40 to 125 搜索库存
替代型号UCC27712DR
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: UCC27712DR

品牌: TI 德州仪器

封装:

当前型号

支持互锁功能的 1.8A/2.8A、620V 半桥驱动器 8-SOIC -40 to 125

当前型号

型号: UCC27712D

品牌: 德州仪器

封装:

完全替代

MOSFET驱动器, 高压侧与低压侧, 10 V至20 V电源, 2.8 A输出, 16 ns/10 ns延迟, SOIC-8

UCC27712DR和UCC27712D的区别