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TLC271MDRG4

TLC271MDRG4

TI(德州仪器) 主动器件

路LinCMOS可编程低功耗TIONAL放大器 LinCMOS PROGRAMMABLE LOW-POWER TIONAL AMPLIFIERS

description

The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

Input Offset Voltage Drift...Typically 0.1 µV/Month, Including the First 30 Days

Wide Range of Supply Voltages Over Specified Temperature Range:

  0°C to 70°C...3 V to 16 V

  –40°C to 85°C...4 V to 16 V

  –55°C to 125°C...5 V to 16 V

Single-Supply Operation

Common-Mode Input Voltage Range Extends Below the Negative Rail C-Suffix and I-Suffix Types

Low Noise. . . 25 nV/√HzTypically at f = 1 kHz High-Bias Mode

Output Voltage Range Includes Negative Rail

High Input Impedance...1012ΩTyp

ESD-Protection Circuitry

Small-Outline Package Option Also Available in Tape and Reel

Designed-In Latch-Up Immunity

TLC271MDRG4中文资料参数规格
技术参数

输出电流 ≤30 mA

供电电流 950 µA

电路数 1

通道数 1

耗散功率 725 mW

共模抑制比 65 dB

输入补偿漂移 1.80 µV/K

带宽 1.70 MHz

转换速率 3.60 V/μs

增益频宽积 1.7 MHz

输入补偿电压 10 mV

输入偏置电流 0.7 pA

工作温度Max 125 ℃

工作温度Min -55 ℃

增益带宽 1.7 MHz

耗散功率Max 725 mW

共模抑制比Min 65 dB

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

长度 4.9 mm

宽度 3.91 mm

高度 1.58 mm

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

TLC271MDRG4引脚图与封装图
TLC271MDRG4引脚图

TLC271MDRG4引脚图

TLC271MDRG4封装图

TLC271MDRG4封装图

TLC271MDRG4封装焊盘图

TLC271MDRG4封装焊盘图

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