TIP121G
数据手册.pdfON SEMICONDUCTOR TIP121G 单晶体管 双极, NPN, 80 V, 65 W, 5 A, 1000 hFE 新
Amplify your current with the NPN Darlington transistor, developed by . This Darlington transistor array"s maximum emitter base voltage is 5 V. This product"s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@0.5A@3 V|1000@3A@3V. It has a maximum collector emitter saturation voltage of 2@12mA@3A|4@20mA@5A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.