STD5NM60T4
数据手册.pdfSTMICROELECTRONICS STD5NM60T4 功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
表面贴装型 N 通道 600 V 5A(Tc) 96W(Tc) DPAK
欧时:
STMicroelectronics, STD5NM60T4
立创商城:
N沟道 600V 5A
得捷:
MOSFET N-CH 600V 5A DPAK
贸泽:
MOSFET N-Ch 600 Volt 5 Amp
e络盟:
晶体管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
艾睿:
Compared to traditional transistors, STD5NM60T4 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 96000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK
Verical:
Trans MOSFET N-CH 600V 5A 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD5NM60T4 Power MOSFET, N Channel, 5 A, 650 V, 1 ohm, 10 V, 4 V
儒卓力:
**N-CH 650V 5A 1000mOhm TO252-3 **
Win Source:
MOSFET N-CH 600V 5A DPAK