STB120N4F6
数据手册.pdfN 通道 STripFET™ F6，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
N 通道 STripFET™ F6，STMicroelectronics
STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。
### MOSFET ，STMicroelectronics
得捷:
MOSFET N-CH 40V 80A D2PAK
欧时:
### N 通道 STripFET™ F6，STMicroelectronicsSTripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。### MOSFET 晶体管，STMicroelectronics
贸泽:
MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
艾睿:
Compared to traditional transistors, STB120N4F6 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 110000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
安富利:
Trans MOSFET N-CH 40V 80A 3-Pin2+Tab D2PAK T/R
富昌:
STB120N4F6 Series N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK
Chip1Stop:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab D2PAK T/R
Verical:
Trans MOSFET N-CH 40V 80A Automotive 3-Pin2+Tab D2PAK T/R
儒卓力:
**N-CH 40V 80A 4mOhm TO263-3 **
力源芯城:
40V,3.5mΩ,80A,N沟道功率MOSFET