STB13NM60N
数据手册.pdfN 通道 MDmesh™,600V/650V,STMicroelectronics
表面贴装型 N 通道 600 V 11A(Tc) 90W(Tc) D2PAK
得捷:
MOSFET N-CH 600V 11A D2PAK
立创商城:
STB13NM60N
欧时:
### N 通道 MDmesh™,600V/650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 11 A, 0.28 ohm, TO-263 D2PAK, 表面安装
艾睿:
Use STMicroelectronics&s; STB13NM60N power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 90000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode.
富昌:
STB13NM60N 系列 N 沟道 600 V 0.36 Ohm MDmesh II 功率 MosFet - D2PAK
Chip1Stop:
Trans MOSFET N-CH 650V 11A 3-Pin2+Tab D2PAK T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 6.93A; 90W; D2PAK
Verical:
Trans MOSFET N-CH 600V 11A 3-Pin2+Tab D2PAK T/R
Newark:
# STMICROELECTRONICS STB13NM60N MOSFET Transistor, N Channel, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
力源芯城:
600V,11A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 600V 11A D2PAK
Win Source:
MOSFET N-CH 600V 11A D2PAK