SIHP12N60E-GE3

VISHAY  SIHP12N60E-GE3  功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V

The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.

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Low figure-of-meritFOM RON x Qg

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Low input capacitance CISS

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Reduced switching and conduction losses

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Ultra low gate charge

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Avalanche energy rated

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Halogen-free