SIHB12N60E-GE3
数据手册.pdfVISHAY SIHB12N60E-GE3 场效应管, MOSFET, N沟道, 600V, 12A, TO-263-3
The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
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- Halogen-free