SI7635DP-T1-GE3
数据手册.pdfVISHAY SI7635DP-T1-GE3 晶体管, P沟道
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
欧时:
### P 通道 MOSFET,8V 至 20V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
e络盟:
VISHAY SI7635DP-T1-GE3. 晶体管, P沟道
艾睿:
Trans MOSFET P-CH 20V 26A 8-Pin PowerPAK SO T/R
Allied Electronics:
SI7635DP-T1-GE3 P-channel MOSFET Transistor, 21 A, 20 V, 8-Pin PowerPAK SO
富昌:
Si7635DP 系列 P沟道 20 V 0.0049 Ohms 表面贴装 功率 Mosfet - PowerPAK SO-8
Verical:
Trans MOSFET P-CH 20V 26A 8-Pin PowerPAK SO T/R
Newark:
# VISHAY SI7635DP-T1-GE3 MOSFET Transistor, P Channel, -40 A, -20 V, 4.9 mohm, 10 V, -2.2 V