SI5404BDC-T1-E3
数据手册.pdfN 沟道 20 V 0.028 Ohm 表面贴装 功率 MosFet - ChipFET-1206-8
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
e络盟:
VISHAY SI5404BDC-T1-E3 MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
艾睿:
Trans MOSFET N-CH 20V 5.4A 8-Pin Chip FET T/R
富昌:
单 N 沟道 20 V 0.028 Ohm 表面贴装 功率 MosFet - ChipFET-1206-8
Verical:
Trans MOSFET N-CH 20V 5.4A 8-Pin Chip FET T/R
Newark:
# VISHAY SI5404BDC-T1-E3 MOSFET Transistor, N Channel, 5.4 A, 20 V, 0.022 ohm, 4.5 V, 600 mV