SI4431CDY-T1-GE3
数据手册.pdfVISHAY SI4431CDY-T1-GE3. 晶体管, MOSFET, P沟道, -9A, -30V
The is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications.
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- 100% Rg tested
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- -55 to 150°C Operating temperature range
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- Halogen-free
欧时:
### P 通道 MOSFET，30V 至 80V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor
e络盟:
VISHAY SI4431CDY-T1-GE3. 晶体管, MOSFET, P沟道, -9A, -30V
艾睿:
Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
富昌:
-30 V 9 A 32 Mohm 漏源导通电阻 当10 V时 25 nC Qg SO-8
Verical:
Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
Newark:
# VISHAY SI4431CDY-T1-GE3 MOSFET Transistor, P Channel, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V
儒卓力:
**P-CH 30V 9A 32mOhm SO-8 **