SI1031R-T1-GE3

VISHAY  SI1031R-T1-GE3.  晶体管, MOSFET, P沟道, 140 mA, -20 V, 20 ohm, -4.5 V, -1.2 V

The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.

.

2000V Gate-source ESD protected

.

High-side switching

.

Low ON-resistance

.

Low threshold

.

45ns Fast switching speed

.

1.5V Rated voltage

.

Halogen-free

.

Ease in driving switches

.

Low offset voltage

.

Low-voltage operation

.

High-speed circuits

.

Low battery voltage operation