SI1021R-T1-GE3

VISHAY  SI1021R-T1-GE3  场效应管, MOSFET, P通道, -60V, 190MA, SC-75A, 整卷

The is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.

.

2000V Gate-source ESD protected

.

High-side switching

.

Low ON-resistance

.

Low threshold

.

20 ns Fast switching speed

.

20 pF Low input capacitance

.

Miniature package

.

Halogen-free

.

Ease in driving switches

.

Low offset voltage

.

Low-voltage operation

.

High-speed circuits

.

Easily driven without buffer

.

Small board area