SI2367DS-T1-GE3
数据手册.pdfVISHAY SI2367DS-T1-GE3 晶体管, P沟道
**Features:
* **Halogen-Free Option Available
* Low-Side Switching
* Low On-Resistance: 5 Ω
* Low Threshold: 0.9 V Typ.
* Fast Switching Speed: 35 ns Typ.
* TrenchFET® Power MOSFETs: 1.5 V Rated
* ESD Protected: 2000 V
**Applications:
**
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits
* Load/Power Switching Cell Phones, Pagers
欧时:
### P 通道 MOSFET,8V 至 20V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
艾睿:
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R
安富利:
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R
富昌:
Si2367DS Series P-Channel 20 V 66 mOhm 0.96 W Surface Mount Mosfet - TO-236
Verical:
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2367DS-T1-GE3 MOSFET Transistor, P Channel, -3.8 A, -20 V, 66 mohm, 4.5 V, -400 mV
力源芯城:
-20V,-3.8A,66mΩ,P沟道MOSFET