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SN74CBT6800CDWR

SN74CBT6800CDWR

TI(德州仪器) 电子元器件分类

具有 –2V 下冲保护的 5V、1:1 SPST、10 通道通用 FET 总线开关 24-SOIC -40 to 85

The SN74CBT6800C is a high-speed TTL-compatible FET bus switch with low ON-state resistance ron, allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6800C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage BIASV to minimize live-insertion noise.

The SN74CBT6800C is a 10-bit bus switch with a single output-enable ON\\\\ input. When ON\ is low, the 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down VCC = 0 V.

During insertion or removal of a card into or from an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage BIASV of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion or removal of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

SN74CBT6800CDWR中文资料参数规格
技术参数

电源电压DC 4.00V ~ 5.50V

输出电流 64.0 mA

触点类型 SPST

位数 10

传送延迟时间 240 ps

电压波节 4.00 V, 5.00 V

带宽 200 MHz

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 4V ~ 5.5V

封装参数

安装方式 Surface Mount

引脚数 24

封装 SOIC-24

外形尺寸

封装 SOIC-24

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

SN74CBT6800CDWR引脚图与封装图
SN74CBT6800CDWR引脚图

SN74CBT6800CDWR引脚图

SN74CBT6800CDWR封装图

SN74CBT6800CDWR封装图

SN74CBT6800CDWR封装焊盘图

SN74CBT6800CDWR封装焊盘图

在线购买SN74CBT6800CDWR
型号 制造商 描述 购买
SN74CBT6800CDWR TI 德州仪器 具有 –2V 下冲保护的 5V、1:1 SPST、10 通道通用 FET 总线开关 24-SOIC -40 to 85 搜索库存
替代型号SN74CBT6800CDWR
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: SN74CBT6800CDWR

品牌: TI 德州仪器

封装: SOIC 10Bit 4V to 5.5V 24Pin

当前型号

具有 –2V 下冲保护的 5V、1:1 SPST、10 通道通用 FET 总线开关 24-SOIC -40 to 85

当前型号

型号: SN74CBT6800CDWRE4

品牌: 德州仪器

封装: 10Bit 4V to 5.5V 24Pin

完全替代

数字总线开关 IC Octal Bus Trncvr & 3.3-5V W/3-St Otpt

SN74CBT6800CDWR和SN74CBT6800CDWRE4的区别

型号: SN74CBT6800CDWE4

品牌: 德州仪器

封装: 10Bit 4V to 5.5V 24Pin

完全替代

10Bit FET Bus Switch With Precharged Outputs For Live Insertion and -2V Undershoot Proctection 24-SOIC -40℃ to 85℃

SN74CBT6800CDWR和SN74CBT6800CDWE4的区别

型号: SN74CBT6800ADW

品牌: 德州仪器

封装: SOIC-24 10Bit 4V to 5.5V 24Pin

类似代替

具有预充电输出的10位FET总线开关 10-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS

SN74CBT6800CDWR和SN74CBT6800ADW的区别