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SN74CBTD3306CDR

SN74CBTD3306CDR

TI(德州仪器) 电子元器件分类

与电平转换5 -V BUS开关双FET总线开关- 2 -V冲保护 DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance ron, allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable 1OE\, 2OE\\\\ inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

SN74CBTD3306CDR中文资料参数规格
技术参数

电源电压DC 5.00 V

输出电流 64.0 mA

触点类型 SPST

位数 2

传送延迟时间 150 ps

带宽 20.0 MHz

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 4.5V ~ 5.5V

电源电压Max 5.5 V

电源电压Min 4.5 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

长度 4.9 mm

宽度 3.91 mm

高度 1.58 mm

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

SN74CBTD3306CDR引脚图与封装图
SN74CBTD3306CDR引脚图

SN74CBTD3306CDR引脚图

SN74CBTD3306CDR封装图

SN74CBTD3306CDR封装图

SN74CBTD3306CDR封装焊盘图

SN74CBTD3306CDR封装焊盘图

在线购买SN74CBTD3306CDR
型号 制造商 描述 购买
SN74CBTD3306CDR TI 德州仪器 与电平转换5 -V BUS开关双FET总线开关- 2 -V冲保护 DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION 搜索库存
替代型号SN74CBTD3306CDR
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: SN74CBTD3306CDR

品牌: TI 德州仪器

封装: SOIC 2Bit 5V 8Pin

当前型号

与电平转换5 -V BUS开关双FET总线开关- 2 -V冲保护 DUAL FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION

当前型号

型号: SN74CBTD3306CDG4

品牌: 德州仪器

封装: SOIC

完全替代

数字总线开关 IC Dual FETBus Switch

SN74CBTD3306CDR和SN74CBTD3306CDG4的区别

型号: SN74CBTD3306CDE4

品牌: 德州仪器

封装: SOIC

完全替代

Dual FET Bus Switch With Level Shifting and -2V Undershoot Protection 8-SOIC -40℃ to 85℃

SN74CBTD3306CDR和SN74CBTD3306CDE4的区别

型号: SN74CBTD3306D

品牌: 德州仪器

封装: SOIC 2Bit 4.5V 8Pin

类似代替

TEXAS INSTRUMENTS  SN74CBTD3306D  逻辑芯片, 总线开关, FET, 双路, 8SOIC

SN74CBTD3306CDR和SN74CBTD3306D的区别