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SMUN2211T3G

SMUN2211T3G

数据手册.pdf

数字晶体管( BRT ) R1 = 10千欧, R2 = 10千? Digital Transistors BRT R1 = 10 k, R2 = 10 k

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

SMUN2211T3G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.338 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 35 @5mA, 10V

额定功率Max 230 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 338 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

长度 2.9 mm

宽度 1.5 mm

高度 1.09 mm

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

SMUN2211T3G引脚图与封装图
暂无图片
在线购买SMUN2211T3G
型号 制造商 描述 购买
SMUN2211T3G ON Semiconductor 安森美 数字晶体管( BRT ) R1 = 10千欧, R2 = 10千? Digital Transistors BRT R1 = 10 k, R2 = 10 k 搜索库存
替代型号SMUN2211T3G
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: SMUN2211T3G

品牌: ON Semiconductor 安森美

封装: SC-59-3 NPN 338mW

当前型号

数字晶体管( BRT ) R1 = 10千欧, R2 = 10千? Digital Transistors BRT R1 = 10 k, R2 = 10 k

当前型号

型号: SMUN2211T1G

品牌: 安森美

封装: SC-59-3 NPN 338mW

完全替代

数字晶体管( BRT ) R1 = 10千欧, R2 = 10千? Digital Transistors BRT R1 = 10 k, R2 = 10 k

SMUN2211T3G和SMUN2211T1G的区别