SBC807-25WT1G
数据手册.pdfSBC807-25W 系列 PNP 45 V 0.5 A 460 mW 标准贴装 通用 晶体管 - SC-70-3
- 双极 BJT - 单 PNP 100MHz 表面贴装型 SOT-23
得捷:
TRANS PNP 45V 0.5A SOT23-3
立创商城:
SBC807-25WT1G
e络盟:
单晶体管 双极, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 40 hFE
艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP SBC807-25WT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 460 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT PNP 45V 0.5A 3-Pin SC-70 T/R
Verical:
Trans GP BJT PNP 45V 0.5A 460mW Automotive 3-Pin SC-70 T/R