SMMBT2222ALT3G
数据手册.pdf通用晶体管 General Purpose Transistors
- 双极 BJT - 单 NPN 40 V 600 mA 300MHz 300 mW 表面贴装型 SOT-23-3（TO-236）
得捷:
TRANS NPN 40V 0.6A SOT23-3
立创商城:
SMMBT2222ALT3G
贸泽:
双极晶体管 - 双极结型晶体管BJT SS GP XSTR SPCL TR
艾睿:
The three terminals of this NPN SMMBT2222ALT3G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Verical:
Trans GP BJT NPN 40V 0.6A 300mW Automotive 3-Pin SOT-23 T/R