STGY50NC60WD

STGY50NC60WD 系列 600 V 50 A 超快 IGBT 通孔 - MAX-247

IGBT 分立，STMicroelectronics

### IGBT 分立件和模块，STMicroelectronics

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

得捷:
IGBT 600V 110A 278W MAX247

欧时:
STMicroelectronics STGY50NC60WD N沟道 IGBT, Vce=600 V, 110 A, 1MHz, 3引脚 Max247封装

艾睿:
You can use this STGY50NC60WD IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 278000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 600V 110A 3-Pin3+Tab Max247

Chip1Stop:
Trans IGBT Chip N-CH 600V 110A 3-Pin3+Tab Max247

Verical:
Trans IGBT Chip N-CH 600V 110A 3-Pin3+Tab Max247

DeviceMart:
IGBT N-CH 110A 600V MAX247