STGP19NC60S

N沟道600V - 20A - TO- 220中频的PowerMESH IGBT N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT

IGBT - 600 V 40 A 130 W 通孔 TO-220

得捷:
IGBT 600V 40A 130W TO220

艾睿:
The STGP19NC60S IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 130000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 600V 40A 3-Pin3+Tab TO-220 Tube

DeviceMart:
IGBT N-CH 600V 20A TO-220