S29GL512P11FFI010
数据手册.pdf
Spansion
飞索半导体
主动器件
SPANSION S29GL512P11FFI010 闪存, 或非, 512 Mbit, 64M x 8位 / 32M x 16位, 并行, FBGA, 64 引脚
The is a 512MB page mode Mirrorbit® Flash Memory fabricated on 90nm process technology. This device offers a fast page access time of 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
- .
- Highest address sector protected
- .
- Enhanced Versatile I/O™ control
- .
- Secured silicon sector region
- .
- Can be programmed and locked at the factory or by the customer
- .
- 100000 Erase cycles per sector typical
- .
- 20 Years data retention typical
- .
- Suspend and resume commands for program and erase operations
- .
- Write operation status bits indicate program and erase operation completion
- .
- Unlock bypass program command - Reduces programming time
- .
- Support for CFI
- .
- Persistent and password methods of advanced sector protection
- .
- WP#/ACC input - Protects first or last sector regardless of sector protection settings
- .
- Accelerates programming time for greater throughput during system production
- .
- Hardware reset input resets device
- .
- Ready/busy# output detects program or erase cycle completion