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RN2412TE85LF

RN2412TE85LF

数据手册.pdf
Toshiba(东芝) 分立器件

Trans Digital BJT PNP 50V 100mA 200mW 3Pin S-Mini T/R

You can apply the benefits of traditional BJTs to digital circuits using the PNP digital transistor, developed by . This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@1mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.25mA@5mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

RN2412TE85LF中文资料参数规格
技术参数

耗散功率 200 mW

击穿电压集电极-发射极 50 V

最小电流放大倍数hFE 120 @1mA, 5V

最大电流放大倍数hFE 120

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

增益带宽 200 MHz

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

高度 1.1 mm

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

RN2412TE85LF引脚图与封装图
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