MOC3053M
数据手册.pdfON Semiconductor(安森美)
电子元器件分类
光电耦合器, DIP, 6 引脚, 4.17 kV, 非过零, 600 V
The MOC3051M, MOC3052M and consist of a GaAs infrared emitting diode optically coupled to a non-zero crossing silicon bilateral AC switch triac. These devices isolate low voltage logic from 115 V lines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching performance of inductive loads.
Features
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- Excellent IFT Stability—IR Emitting Diode Has Low Degradation
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- 600 V Peak Blocking Voltage
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- Safety and Regulatory Approvals
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- UL1577, 4,170 VACRMS for 1 Minute
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- DIN EN/IEC60747-5-5