MRF6S20010GNR1

晶体管, 射频FET, 68 V, 2.2 GHz, 1.6 GHz, TO-270G

Overview

The MRF6S20010NR1 and are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.

MoreLess

## Features

* Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP

Power Gain: 15.5 dB

Drain Efficiency: 36%

IMD: –34 dBc

* Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band 2130–2170 MHz, Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability

Drain Efficiency: 15%

IM3 @ 10 MHz Offset: –47 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset: –49 dBc in 3.84 MHz Channel Bandwidth

* Typical Single–Carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band 1930–1990 MHz, IS–95 Pilot, Sync, Paging, Traffic Codes 8 Through 13. Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Drain Efficiency: 16%

ACPR @ 885 kHz Offset = –60 dBc in 30 kHz Bandwidth

* Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band 1805–1880 MHz

Power Gain: 16 dB

Drain Efficiency: 33%

EVM: 1.3% rms

* Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power

* Characterized with Series Equivalent Large–Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant.

* In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

## Features