MRF8HP21130HSR3
数据手册.pdfW-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
Overview
The MRF8HP21130HR3 and are designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MoreLess
## Features
* Advanced High Performance In-Package Doherty
* Production Tested in a Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* RoHS Compliant
* NI-780-4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
* NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
## Features RF Performance Table
### 2000 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
2110 MHz| 14.2| 46.4| 7.9| –35.4
2140 MHz| 14.1| 45.7| 7.7| –35.3
2170 MHz| 14.0| 45.1| 7.6| –34.8
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW Output Power 3 dB Input Overdrive from Rated Pout
* Typical Pout @ 3 dB Compression Point ≃ 166 Watts CW