M29F200BB45N1

IC FLASH 2Mbit 45NS 48TSOP

Description

The M29F200B is a 2 Mbit 256Kb x8 or 128Kb x16 non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F200B is fully backward compatible with the M29F200.

Features

■ Single 5V±10% supply voltage for Program, Erase and Read operations

■ Access time: 45, 50, 70, 90ns

■ Programming time

  – 8µs per Byte/Word typical

■ 7 memory blocks

  – 1 Boot Block Top or Bottom location

  – 2 parameter and 4 main blocks

■ Program/Erase controller

  – Embedded Byte/Word Program algorithm

  – Embedded Multi-Block/Chip Erase algorithm

  – Status Register polling and toggle bits

  – Ready/Busy output pin

■ Erase Suspend and Resume modes

  – Read and Program another block during Erase Suspend

■ Unlock Bypass Program command

  – Faster Production/Batch Programming

■ Temporary Block Unprotection mode

■ Low power consumption

  – Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

■ 20 years data retention

  – Defectivity below 1 ppm/year

■ Electronic Signature

  – Manufacturer code: 0020h

  – Top Device code M29F200BT: 00D3h

  – Bottom Device code: M29F200BB: 00D4h

■ ECOPACK® packages available