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M93C66-RMB6TG

M93C66-RMB6TG

数据手册.pdf

16千位,千位8 , 4千位,千位2和1千位( 8位或16位宽) MICROWIRE㈢串行EEPROM的访问 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE㈢ serial access EEPROM

Description

The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory EEPROM devices. They are accessed through a Serial Data input D and Serial Data output Q using the MICROWIRE bus protocol

Features

● Industry standard MICROWIRE bus

● Single supply voltage:

   – 4.5 V to 5.5 V for M93Cx6

   – 2.5 V to 5.5 V for M93Cx6-W

   – 1.8 V to 5.5 V for M93Cx6-R

● Dual organization: by word x16 or byte x8

● Programming instructions that work on: byte, word or entire memory

● Self-timed programming cycle with auto erase: 5 ms

● READY/BUSY signal during programming

● 2 MHz clock rate

● Sequential read operation

● Enhanced ESD/latch-up behavior

● More than 1 million write cycles

● More than 40 year data retention

● Packages

   – ECOPACK® RoHS compliant

M93C66-RMB6TG中文资料参数规格
技术参数

频率 1 MHz

电源电压DC 1.80V min

时钟频率 2 MHz

内存容量 500 B

存取时间Max 200 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 1.8V ~ 5.5V

电源电压Max 5.5 V

电源电压Min 1.8 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 DFN-8

外形尺寸

封装 DFN-8

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Unknown

包装方式 Cut Tape CT

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

M93C66-RMB6TG引脚图与封装图
暂无图片
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型号 制造商 描述 购买
M93C66-RMB6TG ST Microelectronics 意法半导体 16千位,千位8 , 4千位,千位2和1千位( 8位或16位宽) MICROWIRE㈢串行EEPROM的访问 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE㈢ serial access EEPROM 搜索库存