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MMUN2231LT1

MMUN2231LT1

数据手册.pdf

偏置电阻晶体管 Bias Resistor Transistor

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

Features

•Simplifies Circuit Design

•Reduces Board Space and Component Count

•Pb−Free Packages are Available

MMUN2231LT1中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

极性 NPN

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 8 @5mA, 10V

额定功率Max 246 mW

封装参数

安装方式 Surface Mount

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 Unknown

包装方式 Tape

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

MMUN2231LT1引脚图与封装图
暂无图片
在线购买MMUN2231LT1
型号 制造商 描述 购买
MMUN2231LT1 ON Semiconductor 安森美 偏置电阻晶体管 Bias Resistor Transistor 搜索库存
替代型号MMUN2231LT1
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MMUN2231LT1

品牌: ON Semiconductor 安森美

封装: SOT-23 NPN 50V 100mA

当前型号

偏置电阻晶体管 Bias Resistor Transistor

当前型号

型号: MMUN2231LT1G

品牌: 安森美

封装: SOT-23 NPN 50V 100mA 400mW

完全替代

MMUN 系列 50 V 100 mA 2.2 kOhm NPN 硅 偏置电阻 晶体管 - SOT-23

MMUN2231LT1和MMUN2231LT1G的区别

型号: PDTC123ET,215

品牌: 安世

封装:

功能相似

Nexperia PDTC123ET,215 NPN 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23 TO-236AB封装

MMUN2231LT1和PDTC123ET,215的区别

型号: MUN2231T1G

品牌: 安森美

封装: SC-59 NPN 50V 100mA 338mW

功能相似

数字晶体管( BRT ) R1 = 2.2千欧, R2 = 2.2 K· Digital Transistors BRT R1 = 2.2 k, R2 = 2.2 k

MMUN2231LT1和MUN2231T1G的区别