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MMUN2212LT1

MMUN2212LT1

数据手册.pdf

偏置电阻晶体管 Bias Resistor Transistor

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

Features

•Simplifies Circuit Design

•Reduces Board Space and Component Count

•Pb−Free Packages are Available

MMUN2212LT1中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

极性 N-Channel

耗散功率 246 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 60 @5mA, 10V

最大电流放大倍数hFE 60

额定功率Max 246 mW

工作温度Max 150 ℃

工作温度Min 55 ℃

封装参数

安装方式 Surface Mount

封装 SOT-23-3

外形尺寸

长度 2.9 mm

宽度 1.3 mm

高度 0.94 mm

封装 SOT-23-3

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

MMUN2212LT1引脚图与封装图
暂无图片
在线购买MMUN2212LT1
型号 制造商 描述 购买
MMUN2212LT1 ON Semiconductor 安森美 偏置电阻晶体管 Bias Resistor Transistor 搜索库存
替代型号MMUN2212LT1
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MMUN2212LT1

品牌: ON Semiconductor 安森美

封装: SOT-23 N-Channel 50V 100mA

当前型号

偏置电阻晶体管 Bias Resistor Transistor

当前型号

型号: MMUN2212LT1G

品牌: 安森美

封装: SOT-23 NPN 50V 100mA 400mW

类似代替

ON SEMICONDUCTOR  MMUN2212LT1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率, SOT-23

MMUN2212LT1和MMUN2212LT1G的区别

型号: NSVMMUN2212LT1G

品牌: 安森美

封装: SOT-23-3 NPN 400mW

类似代替

NPN晶体管与单片偏置电阻网络 NPN Transistors with Monolithic Bias Resistor Network

MMUN2212LT1和NSVMMUN2212LT1G的区别

型号: FJV3103RMTF

品牌: 安森美

封装: SOT-23-3 200mW

类似代替

ON Semiconductor FJV3103RMTF NPN 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 3引脚 SOT-23封装

MMUN2212LT1和FJV3103RMTF的区别