MJE210T
数据手册.pdf互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
Complementary Silicon Power Plastic Transistors
These devices are designed for low voltage, low-power, high-gain audio amplifier applications.
Features
• Collector-Emitter Sustaining Voltage - VCEOsus = 25 Vdc Min @ IC = 10 mAdc
• High DC Current Gain - hFE = 70 Min @ IC = 500 mAdc
= 45 Min @ IC = 2.0 Adc
= 10 Min @ IC = 5.0 Adc
• Low Collector-Emitter Saturation Voltage - VCEsat = 0.3 Vdc Max @ IC = 500 mAdc = 0.75 Vdc Max @ IC = 2.0 Adc
• High Current-Gain - Bandwidth Product - fT = 65 MHz Min @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
• Pb-Free Packages are Available- .