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MJE181

功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON

MJE170, MJE171, MJE172 PNP, MJE180, , MJE182 NPN

3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 − 60 − 80 VOLTS 12.5 WATTS

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.

Features

•Collector−Emitter Sustaining Voltage −

VCEOsus = 40 Vdc − MJE170, MJE180

               = 60 Vdc − MJE171, MJE181

              = 80 Vdc − MJE172, MJE182

•DC Current Gain −

hFE = 30 Min @ IC= 0.5 Adc

       = 12 Min @ IC= 1.5 Adc

•Current−Gain − Bandwidth Product − fT = 50 MHz Min @ IC= 100 mAdc

•Annular Construction for Low Leakages − ICBO = 100 nA Max @ Rated VCB

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings: Machine Model, C Human Body Model, 3B

•Pb−Free Packages are Available
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MJE181中文资料参数规格
技术参数

额定电压DC 60.0 V

额定电流 3.00 A

极性 N-Channel

耗散功率 1.5 W

增益频宽积 50 MHz

击穿电压集电极-发射极 60 V

集电极最大允许电流 3A

最小电流放大倍数hFE 50

最大电流放大倍数hFE 250

额定功率Max 12.5 W

工作温度Max 150 ℃

工作温度Min 65 ℃

封装参数

安装方式 Through Hole

封装 TO-225-3

外形尺寸

长度 7.74 mm

宽度 2.66 mm

高度 11.04 mm

封装 TO-225-3

物理参数

工作温度 -65℃ ~ 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Bulk

最小包装 500

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

MJE181引脚图与封装图
暂无图片
在线购买MJE181
型号 制造商 描述 购买
MJE181 ON Semiconductor 安森美 功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON 搜索库存
替代型号MJE181
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MJE181

品牌: ON Semiconductor 安森美

封装: TO-225-3 N-Channel 60V 3A 1.5W

当前型号

功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON

当前型号

型号: MJE181G

品牌: 安森美

封装: TO-225AA NPN 60V 3A 12500mW

功能相似

ON SEMICONDUCTOR  MJE181G.  射频双极晶体管

MJE181和MJE181G的区别