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MTB75N05HD

数据手册.pdf
ON Semiconductor 安森美 电子元器件分类

D2PAK N-CH 50V 75A

Power MOSFET 75 Amps, 50 Volts

N−Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDSon Specified at Elevated Temperature

• Short Heatsink Tab Manufactured − Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• These devices are available in Pb−free packages. Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local sales office or representative.

MTB75N05HD中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 50 V

连续漏极电流Ids 75A

上升时间 170 ns

输入电容Ciss 2600pF @25VVds

下降时间 100 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2500 mW

封装参数

引脚数 3

封装 D2PAK-263

外形尺寸

封装 D2PAK-263

其他

产品生命周期 Unknown

包装方式 Rail

符合标准

RoHS标准 Non-Compliant

MTB75N05HD引脚图与封装图
暂无图片
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型号 制造商 描述 购买
MTB75N05HD ON Semiconductor 安森美 D2PAK N-CH 50V 75A 搜索库存
替代型号MTB75N05HD
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MTB75N05HD

品牌: ON Semiconductor 安森美

封装:

当前型号

D2PAK N-CH 50V 75A

当前型号

型号: IPP77N06S3-09

品牌: 英飞凌

封装: TO-220 N-CH 55V 77A 5.34nF

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MTB75N05HD和IPP77N06S3-09的区别

型号: NTB75N06G

品牌: 安森美

封装: TO-263-3 N-Channel 60V 75A 9.5mohms 4.51nF

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60V,75A,N沟道MOSFET

MTB75N05HD和NTB75N06G的区别

型号: NTB75N06T4G

品牌: 安森美

封装: TO-263-3 N-Channel 60V 75A 9.5mohms

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MTB75N05HD和NTB75N06T4G的区别