MMFT2406T1
数据手册.pdf功率MOSFET Power MOSFET
最大源漏极电压Vds Drain-Source Voltage| 240V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 700mA/0.7A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 6.0Ω/Ohm @500mA,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.8-2.0V 耗散功率Pd Power Dissipation| 150mW/0.15W Description & Applications| Power MOSFET 700 mA, 240 V, N−Channel, SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • High Voltage − 240 Vdc • Low Drive Requirement • The SOT−223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. • Pb−Free Packages are Available 描述与应用| 功率MOSFET N通道，240 V，700毫安，SOT-223 这是专为高速，低损耗电源功率MOSFET 开关稳压器，转换开关应用，如， 电磁阀和继电器驱动器。该器件采用SOT-223 包是专为中等功率表面贴装应用。 •硅栅快速开关速度 •高电压 - 240 VDC •低驱动要求 •SOT-223包装可以使用波或回流焊接。 所形成的线索在焊接热应力吸收， 消除电路小片损坏的可能性。 •无铅包可用