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MCH3475-TL-E

MCH3475-TL-E

数据手册.pdf

N 通道功率 MOSFET,30V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor

N 通道功率 MOSFET,30V,

### MOSFET ,ON Semiconductor


立创商城:
N沟道 30V 1.8A


得捷:
MOSFET N-CH 30V 1.8A SC70


欧时:
ON Semiconductor Si N沟道 MOSFET MCH3475-TL-E, 1.8 A, Vds=30 V, 3引脚 MCHP封装


贸泽:
MOSFET LOW-NOISE AMPLIFIER


e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 1.8 A, 0.135 ohm, SOT-323, 表面安装


艾睿:
Compared to traditional transistors, MCH3475-TL-E power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


Allied Electronics:
MCH3475-TL-E N-channel MOSFET Transistor, 1.8 A, 30 V, 3-Pin MCHP


安富利:
Trans MOSFET N-CH 30V 1.8A 3-Pin MCPH T/R


Chip1Stop:
Trans MOSFET N-CH 30V 1.8A 3-Pin MCPH T/R


Verical:
Trans MOSFET N-CH 30V 1.8A 3-Pin MCPH T/R


力源芯城:
1.8A,30V,N沟道MOSFET


DeviceMart:
MOSFET N-CH 30V 1.8A MCPH3


Win Source:
MOSFET N-CH 30V 1.8A MCPH3


MCH3475-TL-E中文资料参数规格
技术参数

通道数 1

针脚数 3

漏源极电阻 0.135 Ω

极性 N-Channel

耗散功率 800 mW

阈值电压 2.6 V

漏源极电压Vds 30 V

连续漏极电流Ids 1.80 A

上升时间 3.6 ns

输入电容Ciss 88pF @10VVds

额定功率Max 800 mW

下降时间 4 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 800mW Ta

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-323-3

外形尺寸

长度 2 mm

宽度 1.6 mm

高度 0.85 mm

封装 SOT-323-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

MCH3475-TL-E引脚图与封装图
暂无图片
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型号 制造商 描述 购买
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