MMDT3906V-TP
数据手册.pdf双极晶体管 - 双极结型晶体管BJT 200mA 40V
Bipolar BJT Transistor Array 2 PNP Dual 40V 200mA 250MHz 150mW Surface Mount SOT-563
立创商城:
2个PNP 40V 200mA
得捷:
TRANS 2PNP 40V 0.2A SOT563
贸泽:
双极晶体管 - 双极结型晶体管BJT 200mA 40V
艾睿:
Use this versatile PNP MMDT3906V-TP GP BJT from Micro Commercial Components to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.