MMBTA56WT1G

ON SEMICONDUCTOR  MMBTA56WT1G  Bipolar BJT Single Transistor, AEC-Q101, PNP, -80 V, 50 MHz, 150 mW, -500 mA, 100 hFE 新

Bipolar BJT Transistor PNP 80V 500mA 50MHz 150mW Surface Mount SC-70-3 SOT323

得捷:
TRANS PNP 80V 0.5A SC70-3

立创商城:
MMBTA56WT1G

e络盟:
Bipolar BJT Single Transistor, PNP, -80 V, 50 MHz, 150 mW, -500 mA, 100 hFE

艾睿:
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP MMBTA56WT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 4 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.

安富利:
Trans GP BJT PNP 80V 0.5A 3-Pin SC-70 T/R

Chip1Stop:
Trans GP BJT PNP 80V 0.5A 150mW Automotive 3-Pin SC-70 T/R

Verical:
Trans GP BJT PNP 80V 0.5A Automotive 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  MMBTA56WT1G  Bipolar BJT Single Transistor, PNP, 80 V, 50 MHz, 150 mW, -500 mA, 100 hFE

Win Source:
TRANS PNP 80V 0.5A SC70-3

DeviceMart:
TRANS DRIVER SS PNP -80V SC70-3