MMBTA42LT3G
数据手册.pdf高电压晶体管 High Voltage Transistors
Features
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
得捷:
TRANS NPN 300V 0.5A SOT23-3
立创商城:
MMBTA42LT3G
贸泽:
Bipolar Transistors - BJT 500mA 300V NPN
艾睿:
The NPN MMBTA42LT3G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
Chip1Stop:
Trans GP BJT NPN 300V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
Verical:
Trans GP BJT NPN 300V 0.5A 300mW 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR MMBTA42LT3G Bipolar BJT Single Transistor, NPN, 300 V, 50 MHz, 225 mW, 50 mA, 40 hFE
Win Source:
TRANS NPN 300V 0.5A SOT-23