MMUN2216LT1G

ON SEMICONDUCTOR  MMUN2216LT1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, SOT-23

单电阻器数字，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

得捷:
TRANS PREBIAS NPN 50V SOT23-3

欧时:
单电阻器数字晶体管，ON Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。### 数字晶体管，On Semiconductor配备电阻器的双极性晶体管也称为“数字晶体管”或“偏流电阻器的晶体管”，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。

立创商城:
NPN 双极数字晶体管 BRT

贸泽:
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

e络盟:
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm

艾睿:
Compared to traditional BJ transistors, the NPN MMUN2216LT1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Allied Electronics:
MMUN2216LT1G NPN Digi Transistor; 100mA 50V 4.7 kOhm; Ratio Of None; 3-Pin SOT-23

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R

TME:
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 246mW; SOT23; 4.7kΩ

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMUN2216LT1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, SOT-23

Win Source:
TRANS PREBIAS NPN 0.4W SOT23-3